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| F E AT U R E S Total Integration of GaAs MMIC Attenuators, Silicon MMIC Amplifiers, and TTL Drivers HDI MODEL NO. DA0900 Dual Attenuator / Amplifier Ultra Small 1.3 x 1.5 Surface Mount Package Phase and Amplitude Balance Channel to Channel CONTRASTING COLOR BEAD 1.500 1 RF IN (A) GND 16 dB 8 dB 4 dB 2 dB GND 8 .015 .002 16 PLACES PART IDENTIFICATION .010 .002 16 PLACES RF IN (B) RF OUT (A) GND 32 dB +12 V +5 V 1 dB GND RF OUT (B) 9 16 .200 .200 (A) 1 RF IN ATTEN 6 SECTION AMPLIFIER 16 (A) RF OUT GND 2 16 dB 3 .100 TYP .200 15 GND * * * * * ATTEN 6 SECTION * 14 32 dB 13 +12V 12 +5V 1.300 8 dB 4 4 dB 5 2 dB 6 GND 7 * * 11 1 dB 10 GND (B) 8 RF IN .23 .142 TYP .032 TYP .xx = .02 .xxx = .010 9 (B) RF OUT AMPLIFIER .005 GUARANTEED PERFORM A NCE Parameter GAIN (dB) Cnannel To Channel Min Typ Max Units 20 3 34 TTL 300 10 50 MHz mA mA Conditions At +5 VDC Supply At +12 VDC Supply 6 Line Logic "0" = Thru Logic "1" = Attenuation VIH = +2.7V VIL = +0.5V ISO (dB) VSWR T YP IC A L P E R F OR MA NCE at 25 C Operating Frequency DC Current Control Type 2.0 50 100 1.8 40 80 ISO Control Current High Low 1.6 30 60 Insertion Gain Noise Figure Isolation Channel to Channel Phase Vs. Attenuation Balance 14 60 40 1.4 20 40 GAIN Attenuation 1.2 10 20 VSWR LSB Range Accuracy 0 0 16 7 66 54 6 2 1 40 40 20 10 10 5 63 0 A A dB dB dB dB DEG DEG dB dB dB dB OHMS nSec nSec dBm dBm C 20 - 100 MHz 100 - 300 MHz Channel to Channel 1, 2, 4, 8, 16, 32 (0.25 dB 2% of Atten. Setting in dB) Channel to Channel 1.0 0 0 10 40 100 400 1000 Balance FREQUENCY (MHz) VSWR Impedance Switching Speed Transition (Rise/Fall) Time RF Power Operate No Damage 0.2 1.2/1 50 36 20 +5 -55 +25 0.5 1.4/1 50 +0 +20 +85 50% TTL to 90% / 10% RF 90% / 10% or 10% / 90% RF 0.1 dB Compression TA Operating Temperature DA I C O In d u s t r i e s Rev. - / Iss. 1 |
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